Q3311: defect
Vocabulary ID
http://matvoc.nims.go.jp/entity/Q3311
| Language | Label | Description | Alias |
|---|---|---|---|
| English | defect | - | - |
| Japanese | 欠陥 | - | - |
| Language | English |
|---|---|
| Label | defect |
| Description | |
| Alias |
| Language | Japanese |
|---|---|
| Label | 欠陥 |
| Description | |
| Alias |
Semantic Relatives
Parents
Q3066: semiconductor properties
Siblings:- Q3288: rectification
- Q3289: amplification
- Q3290: oscillation
- Q3291: detection
- Q3292: modulation
- Q3293: bandgap
- Q3295: differential thermal expansion
- Q3296: thermal stress relief layer
- Q3297: deposition by-product
- Q3298: epitaxial layer quality
- Q3299: dislocation density
- Q3300: substrate curvature
- Q3301: donor concentration
- Q3302: acceptor concentration
- Q3303: polarization effect
- Q3304: two-dimensional electron cloud
- Q3305: high voltage performance
- Q3306: load current
- Q3307: On resistance
- Q3308: switching frequency
- Q3309: leakage current
- Q3310: dislocation
- Q3312: pinhole
- Q3313: gate threshold voltage
- Q3314: current rise time/fall ttime
- Q3315: normally on/off characteristics
- Q3316: current collapse
- Q3317: gate drive loss
- Q3318: gate capacitance
- Q3319: switching loss
- Q3320: operating temperature
- Q3321: high temperature operation
- Q3322: thermal resistance
- Q3323: stray load loss
- Q3324: stray capacitance
- Q3325: stray inductance
- Q3326: current surge
- Q3327: voltage surge