Language	Label	Description	Alias
English	semiconductor properties	properies and characteristics of materials used for semicondutor	-
Japanese	半導体特性	半導体として用いられる材料の特徴	-

Language	English
Label	semiconductor properties
Description	properies and characteristics of materials used for semicondutor
Alias

Language	Japanese
Label	半導体特性
Description	半導体として用いられる材料の特徴
Alias

Semantic Relatives

Parents

Q27: properties addressed

Siblings:

• Q206: chemical properties
• Q210: colligative
• Q211: corrosion
• Q221: crystallographic property
• Q226: durability
• Q231: electrical
• Q244: dynamic
• Q248: magnetic
• Q255: mechanical property
• Q278: optical property
• Q282: rheological
• Q285: thermodynamic
• Q306: toxicity
• Q307: transport
• Q3067: radiation properties
• Q3068: other material characteristics

Children

• Q3288: rectification
• Q3289: amplification
• Q3290: oscillation
• Q3291: detection
• Q3292: modulation
• Q3293: bandgap
• Q3295: differential thermal expansion
• Q3296: thermal stress relief layer
• Q3297: deposition by-product
• Q3298: epitaxial layer quality
• Q3299: dislocation density
• Q3300: substrate curvature
• Q3301: donor concentration
• Q3302: acceptor concentration
• Q3303: polarization effect
• Q3304: two-dimensional electron cloud
• Q3305: high voltage performance
• Q3306: load current
• Q3307: On resistance
• Q3308: switching frequency
• Q3309: leakage current
• Q3310: dislocation
• Q3311: defect
• Q3312: pinhole
• Q3313: gate threshold voltage
• Q3314: current rise time/fall ttime
• Q3315: normally on/off characteristics
• Q3316: current collapse
• Q3317: gate drive loss
• Q3318: gate capacitance
• Q3319: switching loss
• Q3320: operating temperature
• Q3321: high temperature operation
• Q3322: thermal resistance
• Q3323: stray load loss
• Q3324: stray capacitance
• Q3325: stray inductance
• Q3326: current surge
• Q3327: voltage surge