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Showing below up to 50 results starting with #2,251.
- device structure (Q3070)
- epitaxial layer structure (Q3069)
- other material characteristics (Q3068)
- radiation properties (Q3067)
- semiconductor properties (Q3066)
- exploring new materials (Q3065)
- other materials (Q3064)
- non-metallic inorganic materials (Q3063)
- half metal and compounds (Q3062)
- nonferrous metal (Q3061)
- area (Q3060)
- Lorentz-Gauss mixing ratio (Q3059)
- position (Q3058)
- height (Q3057)
- half width at half maximum (Q3056)
- (Q3054)
- 4p electron (Q3053)
- 4s electron (Q3052)
- 5p electron (Q3051)
- 5s electron (Q3050)
- 4f electron (Q3049)
- 4d electron (Q3048)
- 3p1/2 electron (Q3047)
- 3p electron (Q3046)
- 3s electron (Q3045)
- 2p electron (Q3044)
- 1s electron (Q3043)
- 3d electron (Q3042)
- 3p3/2 electron (Q3041)
- 2p3/2 electron (Q3040)
- 2p1/2 electron (Q3039)
- 2s electron (Q3038)
- Zr 3d (Q3037)
- Zr 3p (Q3036)
- Zr 2p3 (Q3035)
- Zr 2p1 (Q3034)
- Zr 2s (Q3033)
- Zn 2p3 (Q3032)
- Zn 2p1 (Q3031)
- Zn 2s (Q3030)
- W 5p (Q3029)
- W 5s (Q3028)
- W 4f (Q3027)
- W 4d (Q3026)
- W 4p (Q3025)
- W 4s (Q3024)
- W 3d (Q3023)
- W 3p3 (Q3022)
- W 3p1 (Q3021)
- W 3s (Q3020)