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- 01:46, 16 February 2023 diff hist +90 current rise time/fall ttime (Q3314) Changed label, description and/or aliases in ja
- 01:46, 16 February 2023 diff hist +242 N current rise time/fall ttime (Q3314) Created a new Item
- 01:46, 16 February 2023 diff hist +853 gate threshold voltage (Q3313) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:45, 16 February 2023 diff hist +80 gate threshold voltage (Q3313) Changed label, description and/or aliases in ja
- 01:45, 16 February 2023 diff hist +236 N gate threshold voltage (Q3313) Created a new Item
- 01:45, 16 February 2023 diff hist +853 pinhole (Q3312) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:45, 16 February 2023 diff hist +74 pinhole (Q3312) Changed label, description and/or aliases in ja
- 01:45, 16 February 2023 diff hist +220 N pinhole (Q3312) Created a new Item
- 01:45, 16 February 2023 diff hist +853 defect (Q3311) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:44, 16 February 2023 diff hist +64 defect (Q3311) Changed label, description and/or aliases in ja
- 01:44, 16 February 2023 diff hist +219 N defect (Q3311) Created a new Item
- 01:44, 16 February 2023 diff hist +853 dislocation (Q3310) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:44, 16 February 2023 diff hist +64 dislocation (Q3310) Changed label, description and/or aliases in ja
- 01:44, 16 February 2023 diff hist +225 N dislocation (Q3310) Created a new Item
- 01:44, 16 February 2023 diff hist +853 leakage current (Q3309) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:43, 16 February 2023 diff hist +74 leakage current (Q3309) Changed label, description and/or aliases in ja
- 01:43, 16 February 2023 diff hist +229 N leakage current (Q3309) Created a new Item
- 01:43, 16 February 2023 diff hist +853 switching frequency (Q3308) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:43, 16 February 2023 diff hist +86 switching frequency (Q3308) Changed label, description and/or aliases in ja
- 01:43, 16 February 2023 diff hist +233 N switching frequency (Q3308) Created a new Item
- 01:43, 16 February 2023 diff hist +853 On resistance (Q3307) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:42, 16 February 2023 diff hist +71 On resistance (Q3307) Changed label, description and/or aliases in ja
- 01:42, 16 February 2023 diff hist +227 N On resistance (Q3307) Created a new Item
- 01:42, 16 February 2023 diff hist +853 load current (Q3306) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:42, 16 February 2023 diff hist +71 load current (Q3306) Changed label, description and/or aliases in ja
- 01:42, 16 February 2023 diff hist +226 N load current (Q3306) Created a new Item
- 01:42, 16 February 2023 diff hist +853 high voltage performance (Q3305) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:41, 16 February 2023 diff hist +74 high voltage performance (Q3305) Changed label, description and/or aliases in ja
- 01:41, 16 February 2023 diff hist +238 N high voltage performance (Q3305) Created a new Item
- 01:41, 16 February 2023 diff hist +853 two-dimensional electron cloud (Q3304) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:41, 16 February 2023 diff hist +77 two-dimensional electron cloud (Q3304) Changed label, description and/or aliases in ja
- 01:41, 16 February 2023 diff hist +244 N two-dimensional electron cloud (Q3304) Created a new Item
- 01:41, 16 February 2023 diff hist +853 polarization effect (Q3303) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:40, 16 February 2023 diff hist +71 polarization effect (Q3303) Changed label, description and/or aliases in ja
- 01:40, 16 February 2023 diff hist +233 N polarization effect (Q3303) Created a new Item
- 01:40, 16 February 2023 diff hist +853 acceptor concentration (Q3302) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:40, 16 February 2023 diff hist +80 acceptor concentration (Q3302) Changed label, description and/or aliases in ja
- 01:40, 16 February 2023 diff hist +236 N acceptor concentration (Q3302) Created a new Item
- 01:40, 16 February 2023 diff hist +853 donor concentration (Q3301) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:39, 16 February 2023 diff hist +74 donor concentration (Q3301) Changed label, description and/or aliases in ja
- 01:39, 16 February 2023 diff hist +233 N donor concentration (Q3301) Created a new Item
- 01:39, 16 February 2023 diff hist +853 substrate curvature (Q3300) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:39, 16 February 2023 diff hist +71 substrate curvature (Q3300) Changed label, description and/or aliases in ja
- 01:39, 16 February 2023 diff hist +233 N substrate curvature (Q3300) Created a new Item
- 01:39, 16 February 2023 diff hist +853 dislocation density (Q3299) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:38, 16 February 2023 diff hist +71 dislocation density (Q3299) Changed label, description and/or aliases in ja
- 01:38, 16 February 2023 diff hist +233 N dislocation density (Q3299) Created a new Item
- 01:38, 16 February 2023 diff hist +853 epitaxial layer quality (Q3298) Created claim: has broader (P8): semiconductor properties (Q3066) current
- 01:38, 16 February 2023 diff hist +74 epitaxial layer quality (Q3298) Changed label, description and/or aliases in ja
- 01:38, 16 February 2023 diff hist +237 N epitaxial layer quality (Q3298) Created a new Item