Difference between revisions of "metal-insulator-semiconductor (Q587)"
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Riho Sakurai (talk | contribs) (Created claim: has broader (P8): engineered structures (Q137)) |
(Changed claim: has broader (P8): device structure (Q3070)) |
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| (4 intermediate revisions by one other user not shown) | |||
| label / en | label / en | ||
| + | metal-insulator-semiconductor | ||
| aliases / ja / 0 | aliases / ja / 0 | ||
| + | 金属-絶縁体-半導体 | ||
| aliases / ja / 1 | aliases / ja / 1 | ||
| - | |||
| aliases / en / 0 | aliases / en / 0 | ||
| + | MIS | ||
| Property / has broader | Property / has broader | ||
| - | + | ||
| Property / has broader: device structure / reference | |||
| + | |||
Latest revision as of 05:10, 17 January 2023
No description defined
- MIS
| Language | Label | Description | Also known as |
|---|---|---|---|
| English |
metal-insulator-semiconductor
|
No description defined
|
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