Difference between revisions of "MOS structure (Q564)"
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(Created claim: has broader (P8): engineered structures (Q137)) |
(Changed claim: has broader (P8): device structure (Q3070)) |
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(6 intermediate revisions by one other user not shown) | |||
label / en | label / en | ||
+ | MOS structure | ||
aliases / en / 0 | aliases / en / 0 | ||
+ | metal-oxide-semiconductor | ||
aliases / ja / 0 | aliases / ja / 0 | ||
+ | 金属-酸化物-半導体構造 | ||
Property / has broader | Property / has broader | ||
- | + | ||
Property / has broader: device structure / reference | |||
+ |
Latest revision as of 05:09, 17 January 2023
No description defined
- metal-oxide-semiconductor
Language | Label | Description | Also known as |
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English |
MOS structure
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No description defined
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