Difference between revisions of "field-effect transistor (Q586)"
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Riho Sakurai (talk | contribs) (Created claim: has broader (P8): engineered structures (Q137)) |
(Changed claim: has broader (P8): device structure (Q3070)) |
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(4 intermediate revisions by one other user not shown) | |||
label / en | label / en | ||
+ | field-effect transistor | ||
aliases / ja / 0 | aliases / ja / 0 | ||
+ | 電界効果トランジスタ | ||
aliases / ja / 1 | aliases / ja / 1 | ||
- | |||
aliases / en / 0 | aliases / en / 0 | ||
+ | FET | ||
Property / has broader | Property / has broader | ||
- | + | ||
Property / has broader: device structure / reference | |||
+ |
Latest revision as of 05:10, 17 January 2023
No description defined
- FET
Language | Label | Description | Also known as |
---|---|---|---|
English |
field-effect transistor
|
No description defined
|
|