field-effect transistor (Q586): Difference between revisions
Jump to navigation
Jump to search
Riho Sakurai (talk | contribs) (Created claim: has broader (P8): engineered structures (Q137)) |
(Changed claim: has broader (P8): device structure (Q3070)) |
||
(4 intermediate revisions by one other user not shown) | |||
label / en | label / en | ||
field-effect transistor | |||
aliases / ja / 0 | aliases / ja / 0 | ||
電界効果トランジスタ | |||
aliases / ja / 1 | aliases / ja / 1 | ||
aliases / en / 0 | aliases / en / 0 | ||
FET | |||
Property / has broader | Property / has broader | ||
Property / has broader: device structure / reference | |||
Latest revision as of 05:10, 17 January 2023
No description defined
- FET
Language | Label | Description | Also known as |
---|---|---|---|
English | field-effect transistor |
No description defined |
|