MOS structure (Q564): Difference between revisions
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(Created claim: has broader (P8): engineered structures (Q137)) |
(Changed claim: has broader (P8): device structure (Q3070)) |
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| (6 intermediate revisions by one other user not shown) | |||
| label / en | label / en | ||
MOS structure | |||
| aliases / en / 0 | aliases / en / 0 | ||
metal-oxide-semiconductor | |||
| aliases / ja / 0 | aliases / ja / 0 | ||
金属-酸化物-半導体構造 | |||
| Property / has broader | Property / has broader | ||
| Property / has broader: device structure / reference | |||
Latest revision as of 05:09, 17 January 2023
No description defined
- metal-oxide-semiconductor
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | MOS structure |
No description defined |
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